ELECTRON MICROSCOPY APPLICATIONS
Semicondutors
Scanning electron microscopy (SEM), in combination with focused ion beams (FIB), is an ideal technique for keeping up with the rapid evolution of the semiconductor industry, offering analytical capabilities with high levels of precision.
The semiconductor industry is in a relentless race where the goal is high integration, high density and miniaturization of logic devices. This has led to the development of new technologies, such as 3D integrated circuits, which allow broad functionalities to be integrated into devices that are increasingly smaller, faster and with lower power consumption.
However, these more complicated integrated circuits require more sophisticated tools for development and prototyping, inspection and failure analysis to analyze or target areas of interest.
Fault analysis in integrated circuits
The semiconductor industry continues to reduce the size of electronic devices. Currently, cutting-edge technology is based on integrated circuits with 14 and 10 nm manufacturing processes and 7 nm node technology still in the development phase, but very close to commercialization. TESCAN offers a complete series of microscopes, instruments and accessories ideal for fault analysis in state-of-the-art integrated circuits.
TEM image of a finned sheet prepared from a 14 nm chip by top-to-bottom thinning
Circuit Modification
Circuit modification is a common technique used in the debug phase of integrated circuit design. Most of these applications are performed using FIB systems equipped with a Gas Injection System (GIS). This combination allows very precise milling and material removal in specific locations, as well as the deposition of conductive or insulating contacts.
Ball Grid Array (BGA)
It is a chip packaging technology that consists of an arrangement of solder balls located at the bottom of a chip package. BGAs were developed as a response to the trend that exists in the semiconductor industry towards miniaturization of integrated circuits and whose objective is greater integration, greater density and better functionality.
Cross section of a 400 μm diameter solder ball made in 4 hours using Xe Plasma FIB and Rocking Stage for a curtainless surface
Paths through Silicon
Through-Silicon Vias (TSVs) are an advanced on-chip 3D interconnect technology crucial for on-chip 3D integration packages. TSVs vertically interconnect layers of chips or dies, improving electrical performance, reducing power consumption and the shape of 3D integrated circuits.
Magnified image of a Cu TSV showing the weld bump, passivation layer, mold compound and cladding oxide layer
Connection wires
The use of ultra-thin copper and gold wires remains the most widely used method for creating interconnections on high-density chip modules in the microelectronics and semiconductor industries.
One of the reasons is that automatic cable joining procedures are very reliable and provide high yields. The highest quality in terms of uniformity of cable properties is required; It is desirable that the cables have a homogeneous chemical composition and stable mechanical properties. Such cable properties can be changed or affected by the heat applied during the process of soldering the cables to the cable pads. The area of wiring affected by heat becomes mechanically weaker, which can disrupt cable loop formation and stability.
Screens
Monitor development has progressed rapidly in recent years, resulting in high-quality touchscreens that deliver sharp, bright images, wide viewing angles, and vivid colors.
MEMS
Microelectromechanical systems (MEMS) are a technology that can generally be defined as miniaturized mechanical and electromechanical elements typically made with Si substrate and manufactured using photolithography and chemical printing or etching.
Batteries
A huge amount of research in the battery industry takes place every day to develop the energy storage systems of the future, a task that continues to be one of today’s most relevant technological challenges. This requires analytical techniques capable of differentiating chemical states with high sensitivity and high spatial resolution.
TESCAN equipment for SEMICONDUCTORS
TESCAN VEGA 4
Analytical SEM for routine materials characterization, research, and micrometer-scale quality control applications.
TESCAN AMBER 2 X
A unique combination of Plasma FIB and fieldless UHR FE-SEM for multi-scale materials characterization.
TESCAN SOLARIS X
A Plasma FIB-SEM platform for deep sectioning and the highest resolution for failure analysis in microelectronics.
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